Crystal system: cubic
| Photo conversion efficiency, % |
|---|
Starting materials: inorganic CsPbIBr2 top cell, a commercial heterojunction bottom Si cell, TiO2(20 nm), MoOx and ultrathin Ag film
Product: 4T tandem solar cell
Description: The 4T tandem solar cell contains a wide bandgap, semitransparent, inorganic CsPbIBr2 top cell and a commercial heterojunction bottom Si cell. In the top cell includes a the TiO2(20 nm) as electron transport layer, the MoOx(20 nm) as hole transport layer, the ultrathin Ag film (8 nm) as the transparent electrode, and the outer optical capping layer that used the TeO2 or MoOx with high refractive index to modulate the transmission of Ag electrode. The bottom Si cell contains an ITO transparent conductive layer (10 nm), p-type amorphous Si (a-Si, 20 nm), intrinsic a-Si (15 nm), crystal Si (c-Si, 250 μm), n-type a-Si (20 nm) layer, and an Ag rear electrode (180 nm).
Method: Silvaco Atlas device simulator
Description: Silvaco Atlas device simulator was used to complete optical and electrical calculations. Transfer matrix method (TMM) was used to calculate the inner optical field distribution and carrier generation rate. Electrical characteristics were simulated by the Poisson's equation, carrier continuity equation, and drift-diffusion equations.
Crystal system: cubic
| Band gap (optical, transmission), eV |
|---|
Starting materials: inorganic CsPbIBr2 top cell, a commercial heterojunction bottom Si cell, TiO2(20 nm), MoOx and ultrathin Ag film
Product: 4T tandem solar cell
Description: The 4T tandem solar cell contains a wide bandgap, semitransparent, inorganic CsPbIBr2 top cell and a commercial heterojunction bottom Si cell. In the top cell includes a the TiO2(20 nm) as electron transport layer, the MoOx(20 nm) as hole transport layer, the ultrathin Ag film (8 nm) as the transparent electrode, and the outer optical capping layer that used the TeO2 or MoOx with high refractive index to modulate the transmission of Ag electrode. The bottom Si cell contains an ITO transparent conductive layer (10 nm), p-type amorphous Si (a-Si, 20 nm), intrinsic a-Si (15 nm), crystal Si (c-Si, 250 μm), n-type a-Si (20 nm) layer, and an Ag rear electrode (180 nm).