Data available at materials.hybrid3.duke.edu/materials/dataset/1941

Reference: J. Fujisawa, T. Ishihara, "Excitons and biexcitons bound to a positive ion in a bismuth-doped inorganic-organic layered lead iodide semiconductor", PHYSICAL REVIEW B 70, 205330-1  (2004)

Origin: experimental
Sample type: single crystal

Column 1: photon energy, eV
Column 2: absorption spectrum, a.u

Fixed parameters:
  temperature = 4.0 K


