See all entries for this property (5 total)
Crystal system: orthorhombic
| Temperature, K | Photoluminescence peak position, eV |
|---|
Starting materials: Methylamine (40% in methanol), hydroiodic acid (57 wt% in water), PbI2, g-butyrolactone, H2O2, NH4OH, Si wafer
Product: MAPbI3 film
Description: React 30 mL of methylamine and 32.3 mL of hydroiodic acid at 0 °C for 2 h. Evaporate solvents at 50 °C. Wash the yellowish raw CH3NH3I with diethyl ether by stirring the solution for 30min for a total of three times. Recrystallize CH3NH3I from a mixed solvent of diethyl ether and ethanol. Collect the solid and dry at 60 °C in a vacuum oven for 24 h. Treat Si wafer with an aqueous solution of H2O2 and NH4OH with a volume ratio of H2O2 : NH4OH : H2O = 1 : 1 : 5 for 30 min. Drop a 40 wt% precursor solution of equimolar CH3NH3I and PbI2 in g-butyrolactone onto the Si wafer to form the MAPbI3 film. Spin-coat at 1500 rpm for 30 s, and then at 2500 rpm for 40 min in air. Upon drying at room temperature, color change indicates the formation of MAPbI3 in the solid state. Anneal the MAPbI3 film in air for 15 min at 100 °C.
Method: Photoluminescence
Description: Steady-state and time-resolved PL spectra were measured using an Edinburgh FLS920 spectroscopy system using laser excitation at 405 nm. PL peak is due to near-band edge transition. [Results and discussion paragraph 3; Fig. 2(b) Peak_OI]
Comment: Grain size were 100-500 nm diameter
See all entries for this property (5 total)
Crystal system: tetragonal
| Temperature, K | Photoluminescence peak position, eV |
|---|
Starting materials: Methylamine (40% in methanol), hydroiodic acid (57 wt% in water), PbI2, g-butyrolactone, H2O2, NH4OH, Si wafer
Product: MAPbI3 film
Description: React 30 mL of methylamine and 32.3 mL of hydroiodic acid at 0 °C for 2 h. Evaporate solvents at 50 °C. Wash the yellowish raw CH3NH3I with diethyl ether by stirring the solution for 30min for a total of three times. Recrystallize CH3NH3I from a mixed solvent of diethyl ether and ethanol. Collect the solid and dry at 60 °C in a vacuum oven for 24 h. Treat Si wafer with an aqueous solution of H2O2 and NH4OH with a volume ratio of H2O2 : NH4OH : H2O = 1 : 1 : 5 for 30 min. Drop a 40 wt% precursor solution of equimolar CH3NH3I and PbI2 in g-butyrolactone onto the Si wafer to form the MAPbI3 film. Spin-coat at 1500 rpm for 30 s, and then at 2500 rpm for 40 min in air. Upon drying at room temperature, color change indicates the formation of MAPbI3 in the solid state. Anneal the MAPbI3 film in air for 15 min at 100 °C.
Method: Photoluminescence
Description: Steady-state and time-resolved PL spectra were measured using an Edinburgh FLS920 spectroscopy system using laser excitation at 405 nm. PL peak is due to the near-band-edge transition. Refer to Results and discussion paragraph 2; Fig. 2(a) Peak_T.
Comment: Grain size were: 100-500 nm diameter
See all entries for this property (35 total)
Crystal system: tetragonal
| a: | 8.866 (±0.001) Å |
| b: | 12.668 (±0.001) Å |
| c: | 8.866 (±0.001) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: tetragonal
| a: | 8.83 (±0.001) Å |
| b: | 12.683 (±0.001) Å |
| c: | 8.83 (±0.001) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: tetragonal
| a: | 8.79 (±0.002) Å |
| b: | 12.662 (±0.003) Å |
| c: | 8.79 (±0.002) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: tetragonal
| a: | 8.791 (±0.001) Å |
| b: | 12.678 (±0.001) Å |
| c: | 8.791 (±0.001) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Starting materials: Methylamine (40% in methanol), hydroiodic acid (57 wt% in water), PbI2, g-butyrolactone, H2O2, NH4OH, Si wafer
Product: MAPbI3 film
Description: React 30 mL of methylamine and 32.3 mL of hydroiodic acid at 0 °C for 2 h. Evaporate solvents at 50 °C. Wash the yellowish raw CH3NH3I with diethyl ether by stirring the solution for 30min for a total of three times. Recrystallize CH3NH3I from a mixed solvent of diethyl ether and ethanol. Collect the solid and dry at 60 °C in a vacuum oven for 24 h. Treat Si wafer with an aqueous solution of H2O2 and NH4OH with a volume ratio of H2O2: NH4OH: H2O = 1: 1: 5 for 30 min. Drop a 40 wt% precursor solution of equimolar CH3NH3I and PbI2 in g-butyrolactone onto the Si wafer to form the MAPbI3 film. Spin-coat at 1500 rpm for 30 s, and then at 2500 rpm for 40 min in air. Upon drying at room temperature, color change indicates the formation of MAPbI3 in the solid state. Anneal the MAPbI3 film in air for 15 min at 100 °C.
Method: Powder X-ray diffraction
Description: The MAPbI3 film was characterized by X-ray diffraction (XRD) on a PANalytical X-ray diffractometer (Model EMPYREAN) with a monochromatic Cu Ka1 radiation. The lattice parameters were precisely determined using Si powders as the internal standard reference material. Refer to ESI Table SI.
See all entries for this property (35 total)
Crystal system: orthorhombic
| a: | 8.825 (±0.004) Å |
| b: | 12.682 (±0.005) Å |
| c: | 8.594 (±0.003) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.869 (±0.001) Å |
| b: | 12.628 (±0.001) Å |
| c: | 8.587 (±0.001) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.868 (±0.001) Å |
| b: | 12.625 (±0.002) Å |
| c: | 8.594 (±0.001) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.868 (±0.002) Å |
| b: | 12.621 (±0.001) Å |
| c: | 8.594 (±0.002) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.868 (±0.002) Å |
| b: | 12.623 (±0.001) Å |
| c: | 8.592 (±0.002) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.864 (±0.001) Å |
| b: | 12.62 (±0.001) Å |
| c: | 8.587 (±0.001) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.866 (±0.001) Å |
| b: | 12.619 (±0.001) Å |
| c: | 8.583 (±0.002) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.864 (±0.001) Å |
| b: | 12.618 (±0) Å |
| c: | 8.581 (±0.003) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.863 (±0.001) Å |
| b: | 12.614 (±0.001) Å |
| c: | 8.577 (±0.001) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.856 (±0.002) Å |
| b: | 12.613 (±0) Å |
| c: | 8.574 (±0.003) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Crystal system: orthorhombic
| a: | 8.855 (±0.002) Å |
| b: | 12.614 (±0) Å |
| c: | 8.571 (±0.002) Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Starting materials: Methylamine (40% in methanol), hydroiodic acid (57 wt% in water), PbI2, g-butyrolactone, H2O2, NH4OH, Si wafer
Product: MAPbI3 film
Description: React 30 mL of methylamine and 32.3 mL of hydroiodic acid at 0 °C for 2 h. Evaporate solvents at 50 °C. Wash the yellowish raw CH3NH3I with diethyl ether by stirring the solution for 30min for a total of three times. Recrystallize CH3NH3I from a mixed solvent of diethyl ether and ethanol. Collect the solid and dry at 60 °C in a vacuum oven for 24 h. Treat Si wafer with an aqueous solution of H2O2 and NH4OH with a volume ratio of H2O2 : NH4OH : H2O = 1 : 1 : 5 for 30 min. Drop a 40 wt% precursor solution of equimolar CH3NH3I and PbI2 in g-butyrolactone onto the Si wafer to form the MAPbI3 film. Spin-coat at 1500 rpm for 30 s, and then at 2500 rpm for 40 min in air. Upon drying at room temperature, color change indicates the formation of MAPbI3 in the solid state. Anneal the MAPbI3 film in air for 15 min at 100 °C.
Method: Powder X-ray diffraction
Description: The MAPbI3 film was characterized by X-ray diffraction (XRD) on a PANalytical X-ray diffractometer (Model EMPYREAN) with a monochromatic Cu Ka1 radiation. The lattice parameters were precisely determined using Si powders as the internal standard reference material. Refer to ESI Table SI.
See all entries for this property (20 total)
| Initial crystal system | orthorhombic |
| Final crystal system | tetragonal |
| Initial space group | Unknown |
| Final space group | Unknown |
| Direction | Unknown |
| Phase transition temperature | 140.0 K |
Hysteresis: 10
Starting materials: Methylamine (40% in methanol), hydroiodic acid (57 wt% in water), PbI2, g-butyrolactone, H2O2, NH4OH, Si wafer
Product: MAPbI3 film
Description: React 30 mL of methylamine and 32.3 mL of hydroiodic acid at 0 °C for 2 h. Evaporate solvents at 50 °C. Wash the yellowish raw CH3NH3I with diethyl ether by stirring the solution for 30min for a total of three times. Recrystallize CH3NH3I from a mixed solvent of diethyl ether and ethanol. Collect the solid and dry at 60 °C in a vacuum oven for 24 h. Treat Si wafer with an aqueous solution of H2O2 and NH4OH with a volume ratio of H2O2 : NH4OH : H2O = 1 : 1 : 5 for 30 min. Drop a 40 wt% precursor solution of equimolar CH3NH3I and PbI2 in g-butyrolactone onto the Si wafer to form the MAPbI3 film. Spin-coat at 1500 rpm for 30 s, and then at 2500 rpm for 40 min in air. Upon drying at room temperature, color change indicates the formation of MAPbI3 in the solid state. Anneal the MAPbI3 film in air for 15 min at 100 °C.
Method: Powder X-ray diffraction
Description: No experimental details. Coexistence of the two phases at T from 150 to 130 K.