See all entries for this property (35 total)
Crystal system: tetragonal
| a: | 8.855 Å |
| b: | 8.855 Å |
| c: | 12.659 Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Starting materials: FTO (10 Ω/sq, Nippon Sheet Glass), TiCl4, HI, CH3NH2, PbI2
Product: MAPbI3 on TiO2-coated FTO, TiO2 film had a thickness of 8-12 μm. Powder is black.
Description: Soak FTO in a 40 mM TiCl4 aqueous solution at 70 °C for 30 min to form a thin TiO2 buffer layer. Coat FTO with a commercial nanocrystalline TiO2 paste (refer to SI for more information) using a screen printer and sintering at 480 °C for 1 h in air. Synthesize CH3NH3I by reacting HI with 40% methylamine in methanol solution followed by recrystallization. Drop the TiO2 film into an 8 wt % stoichiometric solution of CH3NH3I and PbI2 in γ-butyrolactone. Subsequent film formation was done by spin-coating.
Comment: The resultant mesoporous TiO2 (n-type semiconductor) film had a thickness of 8-12 μm. The liquid precursor film coated on the TiO2 gradually changed color simultaneously with drying, indicating the formation of CH3NH3PbI3 in the solid state. A vivid color change from yellowish to black is observed.
Method: Powder X-ray diffraction
Description: X-ray diffraction analysis (Rigaku RINT- 2500). Refer to Page 6050: Paragraph 2.
See all entries for this property (24 total)
Crystal system: cubic
| a: | 5.9 Å |
| b: | 5.9 Å |
| c: | 5.9 Å |
| α: | 90° |
| β: | 90° |
| γ: | 90° |
Starting materials: FTO (10 Ω/sq, Nippon Sheet Glass), TiCl4, HBr, CH3NH2, PbBr2
Product: MAPbBr3 on TiO2-coated FTO, MAPbBr3 size 2-3mm. TiO2 film had a thickness of 8-12 μm. Powder is yellow
Description: Soak FTO in a 40 mM TiCl4 aqueous solution at 70 °C for 30 min to form a thin TiO2 buffer layer. Coat FTO with a commercial nanocrystalline TiO2 paste (refer to SI for more information) using a screen printer and sintering at 480 °C for 1 h in air. Synthesize CH3NH3Br by reacting HBr with 40% methylamine in methanol solution followed by recrystallization. Drop the TiO2 film into a 20 wt % stoichiometric solution of CH3NH3Br and PbBr2 in N,N-dimethylformamide. Subsequent film formation was done by spin-coating. The liquid precursor film coated on the TiO2 gradually changed color simultaneously with drying, indicating the formation of CH3NH3PbBr3 in the solid state.
Comment: The resultant mesoporous TiO2 (n-type semiconductor) film had a thickness of 8-12 μm. The liquid precursor film coated on the TiO2 gradually changed color simultaneously with drying, indicating the formation of CH3NH3PbI3 in the solid state. A vivid color change from colorless to yellow is observed.
Method: Powder X-ray diffraction
Description: X-ray diffraction analysis (Rigaku RINT- 2500). Refer to Page 6050: Paragraph 2.