See all entries for this property (20 total)
| Initial crystal system | orthorhombic |
| Final crystal system | tetragonal |
| Initial space group | Unknown |
| Final space group | Unknown |
| Direction | Unknown [although suggests from low to high] |
| Phase transition temperature | 140.0 K |
Hysteresis: Unknown
| Initial crystal system | orthorhombic |
| Final crystal system | tetragonal |
| Initial space group | Unknown |
| Final space group | Unknown |
| Direction | Unknown [although suggests from low to high] |
| Phase transition temperature | 145.0 K |
Hysteresis: 5
Starting materials: PbI2, Si substrate, etc.
Product: MAPbI3 Thin-film on Si
Description: Prepare PbI2 aqueous solution (0.1 g per 100 ml) at 80 °C and cool to room temperature, which leads to the formation of suspended PbI2 microplates. For the PL measurement samples, dip the Si substrates with 300nm SiO2 (with pre-fabricated markers by photolithography) into the aqueous solution for a few seconds. For the FET samples, define the 5 nm Cr/50nm Au (Pt) electrodes with channel lengths of 8 and 40 mm by photolithography followed by thermal evaporation and lift-off. Grow PbI2 microplates onto the pre-fabricated electrodes by randomly dispersion. Convert the prepared PbI2 microplates into CH3NH3PbI3 by vapour phase intercalation. Refer to source for more details.
Method: Temperature-dependent photoluminescence
Description: The thickness of the perovskite microplates was determined by tapping-mode atomic force microscopy (Vecco 5,000 system). TEM images and SAED patterns were acquired in an FEI Titan high-resolution transmission microscopy. The PL measurement was conducted under a confocal micro-Raman system (Horiba LABHR) equipped with a 600 g/mm grating in a backscattering configuration excited by an Ar ion laser (488 nm). For the low-temperature measurement, a liquid nitrogen continuous flow cryostat (Cryo Industry of America) was used to control the temperature from 77 to 300 K. Keeping track of the P2/P1 intensity ratio. Increased P2/P1 intensity ratio with decreasing temperature (Fig. 5a and Supplementary Fig. 8).
Comment: Film thickness ranging from <40 nm to 40-200 nm.
See all entries for this property (20 total)
| Initial crystal system | orthorhombic |
| Final crystal system | tetragonal |
| Initial space group | Unknown |
| Final space group | Unknown |
| Direction | Unknown |
| Phase transition temperature | 130.0 K |
Hysteresis: NIL
| Initial crystal system | orthorhombic |
| Final crystal system | tetragonal |
| Initial space group | Unknown |
| Final space group | Unknown |
| Direction | Unknown |
| Phase transition temperature | 150.0 K |
Hysteresis: NIL
| Initial crystal system | orthorhombic |
| Final crystal system | tetragonal |
| Initial space group | Unknown |
| Final space group | Unknown |
| Direction | Unknown |
| Phase transition temperature | 170.0 K |
Hysteresis: NIL
Starting materials: PbI2, Si substrate, etc.
Product: MAPbI3 Thin-film on Si
Description: Prepare PbI2 aqueous solution (0.1 g per 100 ml) at 80 °C and cool to room temperature, which leads to the formation of suspended PbI2 microplates. For the PL measurement samples, dip the Si substrates with 300nm SiO2 (with pre-fabricated markers by photolithography) into the aqueous solution for a few seconds. For the FET samples, define the 5 nm Cr/50nm Au (Pt) electrodes with channel lengths of 8 and 40 mm by photolithography followed by thermal evaporation and lift-off. Grow PbI2 microplates onto the pre-fabricated electrodes by randomly dispersion. Convert the prepared PbI2 microplates into CH3NH3PbI3 by vapour phase intercalation. Refer to source for more details.
Method: Temperature-dependent transport measurement
Description: The thickness of the perovskite microplates was determined by tapping-mode atomic force microscopy (Vecco 5,000 system). TEM images and SAED patterns were acquired in an FEI Titan high-resolution transmission microscopy. Temperature-dependent FET device measurements were carried out in a probe station ((Lakeshore, TTP4) coupled with a precision source/measurement unit (Agilent B2902A). The scanning rate for the transport measurement is 20V/s and the devices were pre-biased at the opposite voltage for 30 s before each measurement. Refer to Page 3; Page 4 figure 2.
Comment: Film thickness ranging from 30 nm to 400 nm.